Part No. : BLF888A BLF888AS
Description : 110V 21DB SOT539B 860Mhz 600W
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET,
ROHS COMPLIANT, CERAMIC PACKAGE-4
Description : 110V 21DB SOT539B 860Mhz 600W
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET,
ROHS COMPLIANT, CERAMIC PACKAGE-4
1.1 General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
Maker : NXP
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