Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage 'Vds': 60 V
Maximum Gate-Source Voltage 'Vgs': 20 V
Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V
Maximum Drain Current 'Id': 60 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 54 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: TO-220

Package Included:
10PCS STP65NF06 TO-220 P65NF06 65NF06 Power MOSFET Transistor TO-220